Visible photoluminescence from porous a-Si:H and porous a-Si:C:H thin films
نویسندگان
چکیده
We report on the influence of doping, temperature, porosity, band gap, and oxidation on the photoluminescence ~PL! properties of anodically etched porous a-Si:H and a-Si:C:H thin films. Only boron-doped, p-type a-Si:H samples exhibited visible photoluminescence. Two broad PL peaks at ;1.6 and ;2.2 eV are apparent in room temperature PL spectra. The intensity of the 2.2 eV peak as well as the nanovoid density in the unetched a-Si:H layers both correlate well with boron concentration. We see evidence of discrete defect or impurity levels in temperature-dependent luminescence measurements, where we observe multiple luminescence peaks. Unlike in porous crystalline silicon, the luminescence energy in porous amorphous silicon does not change with porosity. We do, though, observe a correlation of luminescence energy with band gap of the starting a-Si:C:H films. Oxidation, either native or anodic, reduces photoluminescence intensity. We discuss the implications of these observations on the nature of the luminescence mechanism. © 1997 American Institute of Physics. @S0021-8979~97!07716-5#
منابع مشابه
Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching
Films of nanocrystalline silicon (nc-Si) were prepared from hydrogenated amorphous silicon (a-Si:H) by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman sca...
متن کاملEffect of growth time on ZnO thin films prepared by low temperature chemical bath deposition on PS substrate
ZnO thin films were successfully synthesized on a porous silicon (PS) substrate by chemical bathdeposition method. X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM),and photoluminescence (PL) analyses were carried out to investigate the effect of growth duration(3, 4, 5, and 6 h) on the optical and structural properties of the aligned ZnO nanorods. T...
متن کاملHydrophilicity of Silica Nano-Porous Thin Films: Calcination Temperature Effects
In this research work, silica nano-porous thin films were deposited on glass substrates by layer by layer method. The thin films were calcinated at various calcination temperatures (200, 300, 400, and 500 °C). The morphology, surface characteristics, surface roughness and hydrophilic properties of the thin films were investigated by field emission scanning electron microscopy, attenuated total ...
متن کاملDMMP Sensing Performance of Undoped and Al Doped Nanocrystalline ZnO Thin Films Prepared by Ultrasonic Atomization and Pyrolysis Method
Highly textured undoped (pure) and Al doped ZnO nanocrystalline thin films prepared by ultrasonic atomization and pyrolysis method are reported in this paper. ZnCl2 water solution was converted into fine mist by ultrasonic atomizer (Gapusol 9001 RBI Meylan, France). The mist was pyrolyzed on the glass substrates in horizontal quartz reactor placed in furnace. The Structural and microstructural ...
متن کاملA model of size-dependent photoluminescence in amorphous silicon nanostructures: Comparison with observations of porous silicon
We present calculations using a simple model of radiative recombination in 2D slabs, 1D wires, and 0D spheres of hydrogenated amorphous silicon ~a-Si:H! showing a significant size dependence of the photoluminescence. Room-temperature peak emission energies .1.8 eV and efficiencies near unity are possible in a-Si:H spheres with diameters ,20 Å. Broad homogeneous linewidths .0.25 eV are also pred...
متن کامل